摘要 |
<p>The present invention relates to a transistor for controlling one or more work functions by having one selected from one or more Piezo materials, graphene having Piezo properties, magnetic particles, and particles having electric charge on a lower end of the graphene, allowing one or more selected from one or more Piezo materials, graphene having Piezo properties, magnetic particles, and particles having electric charge on a lower end of the graphene to bend and change the graphene or transfer the position due to electrostatic level of a crossed wall adjusting circuit, and controlling the height of one or more Schottky barriers.</p> |