OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor film and a semiconductor device which has the oxide semiconductor film and improved characteristics.SOLUTION: Heat treatment is performed on an oxide semiconductor film containing In, Ga and Zn. A semiconductor device having such oxide semiconductor film has improved characteristics. In X-ray diffraction measurement, a crystalline peak is shown within a range of 30°≤2&thetas;≤35°.