| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition, system and process for selectively etching hard mask layers and/or etch residues relative to metal conductor layers and low-k dielectric layers that are present.SOLUTION: Aqueous compositions for stripping a titanium nitride (TiN or TiNxOy) hard mask and removing an etch residue are low pH aqueous composition comprising a solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping a titanium nitride (TiN or TiNxOy) hard mask and removing a titanium nitride (TiN or TiNxOy) etch residue. |
