| 摘要 |
PROBLEM TO BE SOLVED: To pattern features at high resolutions.SOLUTION: Provided herein is an apparatus, including: a patterned resist overlying a substrate; a number of features of the patterned resist, where the number of features include a number of respective sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, where the sidewall-protecting material has a characteristic of a conformal, thin-film deposition, and where the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching. |
