| 发明名称 |
COMPOSITE TRANSPARENT ELECTRODES |
| 摘要 |
Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film. |
| 申请公布号 |
US2015187451(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414488999 |
申请日期 |
2014.09.17 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
PARK Hyeon Cheol;KIM Kwang Hee;KWAK Chan;SON Yoon Chul;LEE Sang Mock |
| 分类号 |
H01B1/02;H01B13/00;C23C14/00 |
主分类号 |
H01B1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composite transparent electrode comprising:
a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga); and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being on one surface of the metal nitride thin film or on opposite surfaces of the metal nitride thin film. |
| 地址 |
Suwon-Si KR |
