发明名称 |
STORAGE DEVICE SYSTEM |
摘要 |
In a storage device system having a plurality of memory modules including a non-volatile memory, improved reliability and a longer life or the like is to be realized. To this end, a plurality of memory modules (STG) notifies a control circuit DKCTL0 of a write data volume (Wstg) that is actually written in an internal non-volatile memory thereof. The control circuit DKCTL0 finds a predicted write data volume (eWd) for each memory module on the basis of the write data volume (Wstg), a write data volume (Wh2d) involved in a write command that is already issued to the plurality of memory modules, and a write data volume (ntW) involved in a next write command. Then, a next write command is issued to the memory module having the smallest predicted write data volume. |
申请公布号 |
US2015186056(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201214423384 |
申请日期 |
2012.09.07 |
申请人 |
Miura Seiji;Uchigaito Hiroshi;Kurotsuchi Kenzo |
发明人 |
Miura Seiji;Uchigaito Hiroshi;Kurotsuchi Kenzo |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A storage device system comprising:
a plurality of memory modules; and a first control circuit for controlling the plurality of memory modules; wherein each memory module of the plurality of memory modules has a plurality of non-volatile memories and a second control circuit for controlling the non-volatile memories, the second control circuit grasps a second write data volume with which writing is actually performed to the plurality of non-volatile memories, and notifies the first control circuit of the second write data volume, and the first control circuit grasps a first write data volume involved in a write command that is already issued to the plurality of memory modules, for each memory module of the plurality of memory modules, then calculates a first ratio that is a ratio of the first write data volume to the second write data volume, for each memory module of the plurality of memory modules, and selects a memory module to which a next write command is to be issued, from among the plurality of memory modules, reflecting a result of the calculation. |
地址 |
Tokyo JP |