发明名称 SEMICONDUCTOR DEVICE, AND CURRENT DETECTOR CIRCUIT USING THE SEMICONDUCTOR DEVICE
摘要 False detection relating to overcurrent is prevented, and it is determined with no dead time whether or not the current of a main element is an overcurrent. By a gate signal indicating conductivity being applied to the gate of a sense element earlier than to a main element when the main element is caused to be conductive, and overshoot caused by a differential circuit of the sense element gate input portion being caused before current flows into the main element, it is possible to prevent false detection relating to overcurrent, and determine with no dead time whether or not the current of the main element is an overcurrent.
申请公布号 US2015185275(A1) 申请公布日期 2015.07.02
申请号 US201514656054 申请日期 2015.03.12
申请人 FUJI ELECTRIC CO., LTD. 发明人 SEKIGAWA Kiyoshi
分类号 G01R31/26;G01R19/00 主分类号 G01R31/26
代理机构 代理人
主权项 1. A semiconductor device comprising: a main element; a sense element for detecting current flowing through the main element on the same semiconductor substrate; a collector terminal of the main element; and a collector terminal of the sense element, wherein the collector terminal of the main element and the collector terminal of the sense element are connected to each other, wherein, when the main element is caused to be conductive, a gate signal indicating conductivity is applied to the gate of the sense element earlier than to the main element, and wherein the current signal is deactivated for a predetermined period from the gate signal causing the sense element to be conductive being provided to the sense element.
地址 Kawasaki-shi JP