发明名称 |
CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING |
摘要 |
A chamber filler kit [or an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. |
申请公布号 |
WO2013138085(A3) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2013US28491 |
申请日期 |
2013.03.01 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
MCCHESNEY, JON;PANAGOPOULOS, THEO;PATERSON, ALEX;BLAIR, CRAIG |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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