发明名称 COMPOSITIONS COMPRISING HETERO-SUBSTITUTED CARBOCYCLIC ARYL COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide new photoresist compositions useful for immersion lithography.SOLUTION: A preferred photoresist composition of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. A particularly preferred photoresist of the invention can exhibit reduced leakage of resist materials into an immersion fluid contacting a resist layer during immersion lithography processing.
申请公布号 JP2015121816(A) 申请公布日期 2015.07.02
申请号 JP20150031404 申请日期 2015.02.20
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 WANG DEYAN;XU CHENG-BAI;BARCLAY GEORGE G
分类号 G03F7/039;C08F220/12;G03F7/004;G03F7/20 主分类号 G03F7/039
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