| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that, when forming a metal bump in an electrode of a semiconductor mounting substrate, it is difficult to accurately control a height of the metal bump, it is difficult to remove a plating mask, residue may remain and it is difficult to form a high-density metal bump.SOLUTION: On the substrate, a thin film insulation layer is formed in such a manner that the electrode is covered and on the electrode, a connection opening is provided. Electrolyte plating is applied over all the surface, thereby forming a uniform and smooth metal conductive layer. The metal bump is obtained by selective etching, such that the smooth metal bump with the uniform height can be formed. The plating mask and the etching mask to be used for the present invention can be processed with usual thickness, there is no risk of mask residue.</p> |
