METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI

摘要

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a silicon-on-insulator (SOI) substrate having a first region and a second region, the SOI substrate including a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate sequentially formed thereon; forming a plurality of shallow trench isolation structures within the second semiconductor substrate in the first and second regions; forming a plurality of transistors on the second semiconductor substrate in the first and second regions; forming a hard mask layer over the second semiconductor substrate, the hard mask layer having an opening exposing a portion of the second semiconductor substrate in the second region; removing the transistors and shallow trench isolation structures disposed in the exposed portion of the second semiconductor substrate to form a deep trench isolation using the hard mask layer as a mask; removing the hard mask layer; and forming a dielectric capping layer covering a bottom and sidewalls of the deep trench isolation.