发明名称 PROCESS FOR TRANSFERRING A LAYER
摘要 This transfer process comprises the following steps: (a) providing a donor substrate and a support substrate; (b) forming an embrittlement region in the donor substrate; (c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate; and assembling the donor substrate to the support substrate, and is noteworthy in that it comprises the following step: (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the exposure time being chosen depending on the thickness of the bonding layer so that the support substrate is thermally decoupled from the first part of the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region.
申请公布号 US2015187638(A1) 申请公布日期 2015.07.02
申请号 US201314409361 申请日期 2013.06.14
申请人 Soitec 发明人 Bruel Michel
分类号 H01L21/762;H01L21/265;H01L21/268 主分类号 H01L21/762
代理机构 代理人
主权项 1. A process for transferring a layer comprising the following steps: (a) providing a donor substrate and a support substrate made of materials having a first and second thermal expansion coefficient, respectively; (b) forming an embrittlement region in the donor substrate so as to delimit a first part and a second part in the donor substrate on either side of the embrittlement region, the first part forming the layer to be transferred to the support substrate; (c) forming a bonding layer between the first part of the donor substrate and the support substrate, the bonding layer having a preset thickness; and (d) assembling the donor substrate to the support substrate; and (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the electromagnetic irradiations belonging to a spectral domain chosen so that the support substrate, the bonding layer and the donor substrate are transparent, transparent and absorbent, respectively, in the spectral domain, the exposure time being chosen depending on the thickness of the bonding layer so that the temperature of the support substrate remains below a threshold during the exposure time, above which threshold defects are liable to appear in the structure comprising the support substrate, the bonding layer and the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region.
地址 Bernin FR