SUBSTRATE PROCESSING APPARATUS, SHUTTER DEVICE AND PLASMA PROCESSING APPARATUS

摘要

Abnormal discharge is suppressed from occurring within a chamber. A plasma processing apparatus 1 includes a cylindrical chamber 10 having an opening 51 through which a processing target substrate is loaded into the chamber; a deposition shield 71 which is provided along an inner wall of the chamber 10 and has an opening 71a at a position corresponding to the opening 51; and a shutter 55, having a plate shape, configured to open and close the opening 71a. Further, in a state that the opening 71a is closed by the shutter 55, an outer periphery of the shutter 55 is overlapped with the deposition shield 71 in a thickness direction of the shutter 55 and an inner periphery of the opening 71a is overlapped with the shutter 55 in the thickness direction of the shutter 55.

主权项

1. A substrate processing apparatus, comprising:
a cylindrical chamber having a first opening through which a processing target substrate is loaded into the chamber; a protection member which is provided along an inner wall of the chamber and has a second opening at a position corresponding to the first opening; and an opening/closing member, having a plate shape, configured to open and close the second opening, wherein, in a state that the second opening is closed by the opening/closing member, an outer periphery of the opening/closing member is overlapped with the protection member in a thickness direction of the opening/closing member, and an inner periphery of the second opening is overlapped with the opening/closing member in the thickness direction of the opening/closing member.