发明名称 |
RESIST UNDERLAYER FILM FORMING COMPOSITION THAT CONTAINS NOVOLAC RESIN HAVING POLYNUCLEAR PHENOL |
摘要 |
There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:; |
申请公布号 |
US2015184018(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201314415040 |
申请日期 |
2013.08.13 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
Endo Takafumi;Shinjo Tetsuya;Hashimoto Keisuke;Someya Yasunobu;Nishimaki Hirokazu;Karasawa Ryo;Sakamoto Rikimaru |
分类号 |
C09D161/12;H01L21/308 |
主分类号 |
C09D161/12 |
代理机构 |
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代理人 |
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主权项 |
1. A resist underlayer film-forming composition comprising:
a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. |
地址 |
Tokyo JP |