| 摘要 |
A production method for columnar semiconductor devices, whereby an N+ area (2a) and a P+ area (3a) are formed inside an Si column (6) and HfO2 layers (9a, 9c), TiN layers (10b, 10d), and SiO2 layers (11b, 11d) are formed so as to surround the Si column (6). Contact sections (21a, 21b) are then opened into a side surface of the N+ area (2a) and the P+ area (3a) and a side surface of the TiN layer (10d). Then, Si and Ni atoms are incident, from the vertical direction, on the upper surface of an i-layer substrate (1) above the Si column (6) and an Si layer and an Ni layer are formed. As a result of subsequent heat treatment, the NiSi layers (18a, 22) caused by Ni silicidation expand in the horizontal direction, thereby connecting the NiSi layers (18a, 22) to the N+ area (2a) and the P+ area (3a) or to the TiN layer (10d). |
