发明名称 METHOD OF MANUFACTURING A TRANSITION METAL DICHALCOGENIDE THIN LAYER
摘要 <p>A method to manufacture a transition metal dichalcogenide thin layer comprises the steps of: preparing a mixed solvent including dimethylformamide, alkylamine, and amino-alcohol and coating a solution including a precursor of a transition metal dichalcogenide; coating the coating solution on a processed substrate; and performing a thermal-process for the coated thin layer. The precursor includes molybdenum or tungsten. The content of alkylamine for a 100 weight of dimethylformamide is 50-200 weight. The content of the amino-alcohol is 16-40 weight.</p>
申请公布号 KR101532883(B1) 申请公布日期 2015.07.02
申请号 KR20140116063 申请日期 2014.09.02
申请人 发明人
分类号 H01L21/20;H01L21/205;H01L21/324 主分类号 H01L21/20
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