METHOD FOR FABRICATING FIN TYPE TRANSISTOR

摘要

A method for fabricating a fin type transistor uniformly implants in targeted regions. The method includes forming a fin protruding in a Z-axis direction from a substrate positioned on an XY. A first region and a second region are included in the substrate and a gate is formed crossing the second region in X-axis direction. An implantation is performed on at least a portion of the second region. The fin is rotated through a first angle, another implantation is performed on at least a portion of the second region, and the fin is rotated again through a second angle, different from the first angle.

主权项

1. A method for fabricating a fin type transistor, the method comprising:
forming a fin protruding from a substrate positioned on an XY plane in a Z-axis direction, extending in a Y-axis direction and including a first region and a second region; forming a first gate crossing the second region in an X-axis direction; performing a first implantation on at least a portion of the second region; rotating the fin and substrate through a first angle in the XY plane; performing a second ion implantation on at least a portion of the second region; and rotating the fin and substrate through a second angle in the XY plane different from the first angle.