| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER SEMICONDUCTOR DEVICE INCLUDING THE SAME |
| 摘要 |
A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer. |
| 申请公布号 |
US2015187882(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414273269 |
申请日期 |
2014.05.08 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK Jae Hoon;SONG In Hyuk;JANG Chang Su;UM Kee Ju |
| 分类号 |
H01L29/16;H01L29/49;H01L29/51;H01L21/04;H01L29/78 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer. |
| 地址 |
Suwon-Si KR |
