| 发明名称 |
SEMICONDUCTOR ARRANGEMENT WITH CAPACITOR AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall. |
| 申请公布号 |
US2015187777(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314144676 |
申请日期 |
2013.12.31 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Hsu Chern-Yow;Liu Ming Chyi;Liu Shih-Chang;Tsai Chia-Shiung;Chen Xiaomeng;Wang Chen-Jong |
| 分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor arrangement comprising:
an active region comprising a semiconductor device; and a capacitor comprising a first electrode over at least one dielectric layer over the active region, wherein the first electrode surrounds an open space within the capacitor. |
| 地址 |
Hsin-Chu TW |
