THROUGH VIA CONTACTS WITH INSULATED SUBSTRATE

摘要

Device and a method of forming a device are disclosed. The method includes providing a crystalline-on-insulator (COI) substrate. The COI substrate includes at least a base substrate over a buried insulator layer. Through via (TV) contacts are formed within the substrate. The TV contact extends from a top surface of the base substrate to within the buried insulator layer. Upper interconnect levels are formed over the top surface of the base substrate. A lower redistribution (RDL) is formed over a bottom surface of the base substrate. The buried insulator layer corresponds to a first RDL dielectric layer of the lower RDL and protects the sidewalls of the TV contacts.

主权项

1. A method of forming a device comprising:
providing a substrate, wherein the substrate comprises a buried oxide (BOX) layer sandwiched by a base substrate and a bottom substrate; forming a dielectric layer on the base substrate; forming through via (TV) contacts within the substrate, the TV contacts extend from a top surface of the dielectric layer to within the BOX layer of the substrate; forming upper interconnect levels on the base substrate over a top surface of the TV contacts, wherein the dielectric layer separates the upper interconnect levels from the base substrate; providing a carrier substrate over a top surface of the upper interconnect levels; and removing the bottom substrate and a portion of the BOX layer to expose a bottom surface of the TV contacts, wherein the remaining BOX layer serves as a first redistribution (RDL) dielectric layer of a lower RDL of the device.