METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION

摘要

A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

主权项

1. A chuck for a plasma processor comprising:
a temperature-controlled base having a fluid circulation passage therein adapted to maintain the base at a constant temperature; a layer of thermal insulation material disposed over said base adapted to provide thermal impedance and RF coupling between the base and plasma in the plasma processor during processing of a semiconductor substrate; an electrostatic chucking (ESC) layer disposed over said layer of thermal insulation material, the ESC layer adapted to support a semiconductor substrate during processing in a plasma processor; and a heater coupled to an underside of said ESC layer, said heater including a plurality of planar heating elements corresponding to a plurality of heating regions in said ESC layer adapted to provide spatial temperature control of a semiconductor substrate during processing thereof.