SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; an n+ region disposed on the second n− type epitaxial layer; a trench passing through the second n− type epitaxial layer, the p type epitaxial layer, and the n+ region, and disposed on the first n− type epitaxial layer; a p+ region disposed on the p type epitaxial layer and separated from the trench; and a gate insulating layer positioned in the trench, in which channels are disposed in the second n− type epitaxial layer of both sides of the trench and the p type epitaxial layer of both sides of the trench.

主权项

1. A semiconductor device, comprising:
a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; an n+ region disposed on the second n− type epitaxial layer; a trench passing through the second n− type epitaxial layer, the p type epitaxial layer, and the n+ region, and disposed on the first n− type epitaxial layer; a p+ region disposed on the p type epitaxial layer and separated from the trench; a gate insulating layer positioned in the trench; a gate electrode positioned on the gate insulating layer; an oxide layer positioned on the gate electrode; a source electrode positioned on the n+ region, the oxide layer, and the p+region; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, wherein channels are disposed in the second n− type epitaxial layer of both sides of the trench, and in the p type epitaxial layer of both sides of the trench.