发明名称 |
NITRIDE SEMICONDUCTOR STRUCTURE |
摘要 |
A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer, in which the buffer layer includes n sub-buffer layers where n≧2, and each of the sub-buffer layers has island structures. The nitride semiconductor layer is disposed on the buffer layer. |
申请公布号 |
US2015187876(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201314144566 |
申请日期 |
2013.12.31 |
申请人 |
Industrial Technology Research Institute |
发明人 |
Hu Chih-Wei;Liao Chen-Zi;Liu Hsun-Chih;Xuan Rong |
分类号 |
H01L29/06;H01L29/32;H01L29/267 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A nitride semiconductor structure, comprising:
a silicon substrate; a nucleation layer, disposed on the silicon substrate; a buffer layer, disposed on the nucleation layer, wherein the buffer layer comprises n sub-buffer layers where n≧2, and each of the sub-buffer layers has island structures; and a nitride semiconductor layer, disposed on the buffer layer. |
地址 |
Hsinchu TW |