发明名称 |
Apparatus Fabrication using Localized Annealing |
摘要 |
A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer. |
申请公布号 |
US2015182995(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201314144720 |
申请日期 |
2013.12.31 |
申请人 |
Theodore Nirmal David |
发明人 |
Theodore Nirmal David |
分类号 |
B05D3/06;H05B6/64;H01L21/67 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating an apparatus using radiation annealing, the method comprising:
forming an annealable layer on a substrate; forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus; directing radiation toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer. |
地址 |
Mesa AZ US |