A pixel structure (10) comprises a thin film transistor substrate (20), a colour filter substrate (30) and a liquid crystal layer (40). The thin film transistor substrate (20) comprises a first transparent substrate (22) and a pixel electrode (24). The colour filter substrate (30) comprises a second transparent substrate (32) and a common electrode (34). The pixel electrode (24) comprises a first sub-pixel electrode (26) and a second sub-pixel electrode (28). The common electrode (34) comprises a first sub-common electrode (36) and a second sub-common electrode (38). The first sub-pixel electrode (26) has a first voltage difference from the first sub-common electrode (36). The second sub-pixel electrode (28) has a second voltage difference from the second sub-common electrode (38). The first voltage difference is greater than or less than the second voltage difference.
申请公布号
WO2015096258(A1)
申请公布日期
2015.07.02
申请号
WO2014CN71159
申请日期
2014.01.22
申请人
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.