SPLIT-GATE POWER SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

摘要

The present invention generally relates to a power Field-Effect Transistor (FET) structure and manufacturing. The present invention provides a planar power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and an Insulated-Gate Bipolar Transistor (IGBT) structure comprising a split gate and a semi-insulating field plate. The present invention further provides manufacturing methods for these structures.