| 摘要 |
A field-effect transistor for a thin film transistor, and a manufacturing method therefor. The field-effect transistor comprises a substrate (11), a gate electrode, a source electrode, a drain electrode, and an oxide semiconductor layer (14). The oxide semiconductor layer (14) comprises a source region and a drain region electrically in contact with the source electrode and the drain electrode separately; and comprises a channel region used for providing a conducting channel between the source electrode and the drain electrode. A gate electrode insulation layer (12) is disposed between the oxide semiconductor layer (14) and a gate region in electric contact with the gate electrode. An oxide semiconductor protection layer (15) is disposed on the oxide semiconductor layer (14). By using the field-effect transistor for the thin film transistor and the manufacturing method therefor, the oxide semiconductor layer can be prevented from being damaged in a process of manufacturing the field-effect transistor for the thin film transistor, thereby improving a conducting feature and the structural integrity of the device. |
