| 摘要 |
A complementary thin film transistor drive backplane, a preparation method thereof and a display apparatus, comprising: forming a lower-layer electrode (102) on an underlying substrate (101); sequentially arranging a continuous growing dielectric layer (103), a semiconductor layer (104) and a diffusion protection layer (105); sequentially forming a photoresist-free area (107), an N-type thin film transistor preparation area (108) and a P-type thin film transistor preparation area (109); removing a photoresist layer (114) of the N-type thin film transistor preparation area (108); removing the diffusion protection layer (105) of the N-type thin film transistor preparation area (108); removing the photoresist layer (114) of the P-type thin film transistor preparation area (109); performing oxidation treatment on the underlying substrate (101); arranging a passivation layer (111) on the underlying substrate (101); and forming an upper-layer electrode (113) on the passivation layer (111). |
