SUBSTRATE DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an array substrate which can effectively prevent removal of an oxide conductive film and a silicon nitride film on the oxide conductive film without damaging the credibility.SOLUTION: A manufacturing method of an array substrate 16 comprises a surface treatment step and a nitride film formation step. The surface treatment step is a step of cleaning an oxide conductive film 49 without reduction by plasma discharge and etching a surface layer of an insulation film layer 48 which is not covered with the oxide conductive film 49 and a part of the insulation film layer 48 in a region covered with the oxide conductive film 49 to form a recess 55 which penetrates beneath the oxide conductive film 49. The nitride film formation step is a step of covering the recess 55 and the oxide conductive film 49 by plasma CVD following the surface treatment step to form a silicon nitride film 50.