发明名称 |
LIGHT-EMITTING DEVICE |
摘要 |
A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions. |
申请公布号 |
US2015187818(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414580949 |
申请日期 |
2014.12.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Miyake Hiroyuki;Koezuka Junichi;Jintyou Masami;Shima Yukinori;Yamazaki Shunpei |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting device comprising:
a pixel comprising a light-emitting element, a first transistor and a second transistor; a first circuit configured to generate a signal including a value of current extracted from the pixel; and a second circuit configured to correct an image signal by the signal, wherein the first transistor is configured to control supply of current to the light-emitting element by the image signal, wherein the second transistor is configured to control extraction of current from the pixel, and wherein a semiconductor film of each of the first transistor and the second transistor comprises: a first semiconductor region overlapping with a gate electrode; a second semiconductor region in contact with a source electrode or a drain electrode; and a third semiconductor region containing higher concentration of hydrogen than the first semiconductor region and the second semiconductor region between the first semiconductor region and the second semiconductor region. |
地址 |
Atsugi-shi JP |