METHODS, SYSTEMS, AND APPARATUS FOR IMPROVING THIN FILM RESISTOR RELIABILITY

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof The ReRAM cells may include a first layer operable as a bottom electrode. The ReRAM cells may also include a second layer operable as a variable resistance layer configured to switch between at least a first resistive state and a second resistive state. The ReRAM cells may further include a third layer formed over the second layer. The third layer may have a substantially constant electrical resistivity. Moreover, the third layer may include a ternary metal-silicon nitride having a ratio of metal to silicon that is between about 1:1 and 1:4. Furthermore, the ternary metal-silicon nitride may include a metal that has an atomic weight that is greater than 90. The ReRAM cells may further include a fourth layer operable as a top electrode.

主权项

1. A resistive switching nonvolatile memory element comprising:
a first layer formed on a substrate,
wherein the first layer is operable as a bottom electrode; a second layer formed over the first layer,
wherein the second layer is operable as a variable resistance layer configured to switch between at least a first resistive state and a second resistive state; a third layer formed over the second layer,
wherein the third layer has a substantially constant electrical resistivity, andwherein the third layer comprises a ternary metal-silicon nitride having a ratio of metal to silicon that is between about 1:1 and 1:4,wherein the ternary metal-silicon nitride of the third layer comprises one of hafnium, lutetium, or iridium; and a fourth layer formed over the third layer, wherein the fourth layer is operable as a top electrode.