Zinc Blende Cadmium-Manganese-Telluride with Reduced Hole Compensation Effects and Methods for Forming the Same

摘要

Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blende crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.

主权项

1. A method for forming cadmium-manganese-telluride (CMT), the method comprising:
positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises at least one target in the processing chamber, the at least one target comprising cadmium, manganese, tellurium, or a combination thereof; introducing dimethyl cadmium gas into the processing chamber; and causing material to be ejected from the at least one target, the material forming CMT above the substrate.