| 主权项 |
1. A semiconductor device comprising:
a first aluminum oxide film over a substrate; a transistor over the first aluminum oxide film, the transistor comprising:
a gate electrode;a gate insulating film; andan oxide semiconductor film including a channel formation region, between the gate electrode and the gate insulating film; and a second aluminum oxide film over the transistor, wherein the first aluminum oxide film, the transistor, and the second aluminum oxide film overlap each other, and wherein each of the first aluminum oxide film and the second aluminum oxide film contains boron. |
