| 摘要 |
A complementary-type thin film transistor driving backplate, a manufacturing method therefor, and a display device. The method comprises: arranging a lower semiconductor layer on a base substrate (101), and forming a P-type semiconductor active layer (103); arranging a gate insulating layer (107) on the lower semiconductor layer; arranging a lower electrode layer on the gate insulating layer (107), and forming a P-type transistor gate electrode (108), an N-type transistor source electrode (109) and an N-type transistor drain electrode (110); arranging an upper semiconductor layer on the lower electrode layer, and forming a pixel electrode (111) and an N-type semiconductor active layer (112); arranging an isolating insulating protection layer (113) on the upper semiconductor layer, and forming a contact hole (114) and a protection unit (115); arranging an upper electrode layer on the isolating insulating protection layer (113), and forming a P-type transistor source electrode (116), a P-type transistor drain electrode (117) and an N-type transistor gate electrode (118); arranging a pixel definition layer (119) on the upper electrode layer, and forming a pixel connection port (120). |
