| 摘要 |
A polysilicon TFT device and a method for manufacturing same are provided. The polysilicon TFT device comprises: scan lines (10) and data lines (12) arranged staggerly; a semiconductor layer (11) electrically connected with the scan lines (10) and the data lines (12); and a pixel electrode (13) electrically connected with the semiconductor layer (11); the semiconductor layer (11) formed into multiple channel regions and doped regions arranged successively at intervals from the connection points of the semiconductor layer (11) and the data lines (12) to the connection points of the semiconductor layer (11) and the pixel electrode (13), the channel regions being intersected and overlapped portions of the semiconductor layer (11) and the scan lines (10),and the other portions being the doped regions, the width of at least one of the doped regions being 0.5-3 um and an ion doping concentration being 2*E11~5*E15. It forms the multiple channel regions and doped regions arranged mutually at intervals by the semiconductor layer (11) designed to be a bent pattern and successively interested with the scan lines (10) , and reduces leakage of electric current by controlling the width and the ion doping concentration of the doped regions. |
