LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Provided are a low temperature poly-silicon thin film transistor and manufacturing method thereof, the low temperature poly-silicon thin film transistor comprising at least a gate insulating layer, the gate insulating layer being a composite insulating layer comprising at least three dielectric layers, the compactness of each dielectric layer increases in the order of being formed in the manufacturing process. Considering the compactness of each layer in the composite dielectric layer enhances the surface contact property and thin film continuity of each layer; and considering the thickness of each layer in the composite dielectric layer effectively reduces spurious capacitance and increases the corresponding speed of the transistor.