METHOD OF PREPARING ARRAY OF THIN FILM TRANSISTOR

摘要

The present invention relates to a molybdenum-based metal film etchant composition and to a method for forming an array of a thin film transistor using the same, and more specifically, to a molybdenum-based metal film etchant composition which can selectively etch a molybdenum-based metal oxide film by comprising 5 to 25 wt% of peroxide, 0.05 to 1 wt% of a fluorine-containing compound, 0.5 to 3 wt% of an aromatic organic acid or salt thereof, and residual water, and to a method for forming an array of a thin film transistor using the same.