REDUCED STRESS TSV AND INTERPOSER STRUCTURES

摘要

A microelectronic component with circuitry includes a substrate (possibly semiconductor) having an opening in a top surface. The circuitry includes a conductive via (possibly metal) in the opening. The opening has a first sidewall of a first material, and the conductive via has a second sidewall of a second material (possibly metal). At least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location. Between the meeting location and the top surface of the substrate, the first and second sidewalls are separated by a third material (possibly foam) which is a dielectric different from the first material. The third material lowers thermal stress in case of thermal expansion compared to a structure in which the third material were replaced with the second material.

主权项

1. A method for making a microelectronic component, the method comprising:
providing a substrate comprising an opening in a top surface, the substrate forming part of the microelectronic component; and forming a conductive via in the opening, the conductive via forming at least part of circuitry of the microelectronic component; wherein the opening comprises a first sidewall of a first material, and the conductive via comprises a second sidewall of a second material; wherein at least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location, and between the meeting location and the top surface of the substrate the first and second sidewalls are separated by a third material which is a dielectric different from the first material.