| 发明名称 |
Method of Manufacturing a Semiconductor Device with Buried Channel/Body Zone and Semiconductor Device |
| 摘要 |
A semiconductor device includes a source zone of a first conductivity type formed in a first electrode fin that extends from a first surface into a semiconductor portion. A drain region of the first conductivity type is formed in a second electrode fin that extends from the first surface into the semiconductor portion. A channel/body zone is formed in a transistor fin that extends between the first and second electrode fins at a distance to the first surface. The first and second electrode fins extend along a first lateral direction. A width of first gate sections, which are arranged on opposing sides of the transistor fin, along a second lateral direction perpendicular to the first lateral direction is greater than a distance between the first and second electrode fins. |
| 申请公布号 |
US2015187654(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314141839 |
申请日期 |
2013.12.27 |
| 申请人 |
Infineon Technologies Dresden GmbH |
发明人 |
Tegen Stefan;Lemke Marko;Weis Rolf |
| 分类号 |
H01L21/8234;H01L27/088;H01L21/8236 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a source zone of a first conductivity type formed in a first electrode fin extending from a first surface into a semiconductor portion; a drain region of the first conductivity type formed in a second electrode fin extending from the first surface into the semiconductor portion; and a channel/body zone formed in a transistor fin extending between the first and second electrode fins at a distance to the first surface, wherein the first and second electrode fins extend along a first lateral direction, wherein a width of first gate sections arranged on opposing sides of the transistor fin along a second lateral direction perpendicular to the first lateral direction is greater than a distance between the first and second electrode fins. |
| 地址 |
Dresden DE |
