| 发明名称 |
SILICON-ON-INSULATOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF |
| 摘要 |
A method of manufacturing a silicon-on-insulator (SOI) substrate is provided. The method includes forming an island-shaped insulating layer on a first surface of a first semiconductor substrate in a first region, forming a silicon epitaxial layer on the first surface of the first semiconductor substrate so as to cover the island-shaped insulating layer, forming a trench by etching the silicon epitaxial layer so as to expose the island-shaped insulating layer, and forming a first insulating adhesive layer on the silicon epitaxial layer and the island-shaped insulating layer so as to fill the trench. |
| 申请公布号 |
US2015187639(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414341487 |
申请日期 |
2014.07.25 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
HUANG Herb He;DROWLEY Clifford I. |
| 分类号 |
H01L21/762;H01L27/12;H01L29/06 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a silicon-on-insulator (SOI) substrate, comprising:
forming an island-shaped insulating layer on a first surface of a first semiconductor substrate in a first region; forming a silicon epitaxial layer on the first surface of the first semiconductor substrate so as to cover the island-shaped insulating layer; forming a trench by etching the silicon epitaxial layer so as to expose the island-shaped insulating layer; and forming a first insulating adhesive layer on the silicon epitaxial layer and the island-shaped insulating layer so as to fill the trench. |
| 地址 |
Shanghai CN |
