| 摘要 |
Provided are a structure for a power semiconductor device, and a manufacturing method therefor. Provided are structures of thin semi-insulating field plates (32, 33, 34) among metal electrodes (21, 22, 23) located on a surface of a power semiconductor device. The thin semi-insulating field plates (32, 33, 34) are formed by conducting deposition before metallization and conducting annealing after the metallization. The structure can be used in a horizontal power semiconductor device and a vertical power semiconductor device. |
