发明名称 |
SEMICONDUCTOR DEVICES WITH INNER VIA |
摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor devices with an inner via, and a method of manufacturing the same.SOLUTION: A transistor device 100 includes: a semiconductor substrate 102 having an inactive area 106 and a pair of active areas 104 separated by the inactive area 106; a control terminal 108 supported by the semiconductor substrate 102 and extending across the pair of active areas 104 and the inactive area 106 to define a conduction path during operation between a first conduction region in each area 104 and a second conduction region in each area 104; conduction terminals 114, 116 supported by the semiconductor substrate 102 and extending across the pair of active areas 104 and the inactive area 106 for electrical connection to each first conduction region; and a source via 118 extending through the semiconductor substrate 102, electrically connected to the conduction terminal 114, and positioned in the inactive area 106. |
申请公布号 |
JP2015122493(A) |
申请公布日期 |
2015.07.02 |
申请号 |
JP20140250686 |
申请日期 |
2014.12.11 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
DARRELL G HILL;MARCEL N TUTT |
分类号 |
H01L21/338;H01L21/3205;H01L21/336;H01L21/768;H01L23/522;H01L29/41;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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