发明名称 METHOD FOR FORMING ANODIC OXIDE FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for forming an anodic oxide film, in the object to be treated with a complicated shape, capable of realizing high speed treatment by a simple method and achieving the uniformization of film thickness.SOLUTION: Provided is a method for forming an anodic oxide film including: first conduction steps S1, S2 of disposing the metallic object to be treated as an anode in an electrolytic solution together with a cathode, conducting the first direct current A1 between both the electrodes in such a manner that the temperature difference between the respective parts in the surface to be treated reaches below a pre-set prescribed value, and holding the first direct current A1; and at least one second conduction step S3, S4 of conducting the second direct current A2 in a value higher than the first direct current A1 between both the electrodes.</p>
申请公布号 JP2015120945(A) 申请公布日期 2015.07.02
申请号 JP20130264104 申请日期 2013.12.20
申请人 AISIN SEIKI CO LTD 发明人 HIROSE EMI;KOBAYASHI HIROYUKI;KATO SEIKI
分类号 C25D11/04;C25D11/26 主分类号 C25D11/04
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