Stacked Bi-layer as the low power switchable RRAM

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The resistive switching nonvolatile memory cells may include a first layer disposed. The first layer may be operable as a bottom electrode. The resistive switching nonvolatile memory cells may also include a second layer disposed over the first layer. The second layer may be operable as a resistive switching layer that is configured to switch between a first resistive state and a second resistive state. The resistive switching nonvolatile memory cells may include a third layer disposed over the second layer. The third layer may be operable as a resistive layer that is configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The third layer may include a semi-metallic material. The resistive switching nonvolatile memory cells may include a fourth layer that may be operable as a top electrode.

主权项

1. A resistive switching nonvolatile memory element comprising:
a first layer formed on a substrate, the first layer operable as a bottom electrode; a second layer formed over the first layer, the second layer operable as a resistive switching layer configured to switch between at least a first resistive state and a second resistive state; a third layer formed over the second layer, the third layer operable as a resistive layer having a substantially constant resistance, and the third layer comprising a semi-metallic material; and a fourth layer formed over the third layer, the fourth layer operable as a top electrode.