LIGHT EMITTING DEVICE

摘要

Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

主权项

1. A light emitting device comprising:
a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer, wherein the first n-type semiconductor layer has a Si impurity concentration different from that of the second n-type semiconductor layer.