发明名称 |
SILICON WAVEGUIDES WITH EMBEDDED ACTIVE CIRCUITRY |
摘要 |
The present disclosure discloses silicon waveguides with embedded active circuitry fabricated from silicon wafers utilizing photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method of fabricating the waveguides utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of which at least partially defines the at least one waveguide and at least one embedded circuit recess. The photolithographic microfabrication techniques are sufficiently precise for the required small structural features of high frequency waveguides and the double masking layer allows the method to be completed more efficiently. The basic fabrication method may be extended to provide batch arrays to mass produce silicon waveguide devices. |
申请公布号 |
US2015185416(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201514657020 |
申请日期 |
2015.03.13 |
申请人 |
TELEDYNE SCIENTIFIC & IMAGING, LLC |
发明人 |
Stupar Philip A.;Borwick, III Robert L.;Mihailovich Robert E.;DeNatale Jeffrey F. |
分类号 |
G02B6/122 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
1. A waveguide apparatus, comprising:
a first silicon structure, said first silicon structure defining a first portion of a waveguide and a recessed area to receive a circuit; a circuit embedded within said recessed area; and a second silicon structure, said second silicon structure defining a second portion of said waveguide, said first and second silicon structures bonded together such that the first and second portions of said waveguide are aligned. |
地址 |
Thousand Oaks CA US |