| 摘要 |
The present invention provides a process for producing an anode object for capacitors, the process comprising a sintering step in which a sintered object of a tungsten powder is formed, a chemical-treatment step in which a dielectric layer is formed on the surfaces of the sintered object, and a treatment step in which after forming the dielectric layer, the dielectric layer is brought into contact with an alkoxide compound of a valve metal. The treatment step is conducted so that (A) the sintered object having the dielectric layer formed thereon has a ratio of the mass loss at 100-300°C in differential thermal analysis to the initial mass is 0.02% or less, or that (B) in the surface layer of the dielectric layer, the ratio of the number of valve metal atoms excluding tungsten to the number of tungsten atoms is 0.05-0.35, or that (C) the requirements (A) and (B) are satisfied. According to the invention, it is possible to reduce the bias voltage dependence of capacitors including tungsten-powder sintered objects as anode objects. |
