LIGHT-EMITTING DEVICE

摘要

A photoelectric device (105). The photoelectric device (105) at least comprises: a light-emitting epitaxial lamination layer which at least comprises a first semiconductor layer (541) of a first conduction type, a second semiconductor layer (543) of a second conduction type and an active layer (542) which is sandwiched therebetween; a first electrode which is located above a surface of the first semiconductor layer (541) and comprises a bonding pad (521) and an extended electrode (522), wherein the extended electrode (522) is formed by extending the bonding pad (521) outwards; and a current barrier layer (532) which is located below the extended electrode (522), wherein the extension direction thereof is consistent with that of the extended electrode (522), but the edge thereof is not arranged in parallel with the edge of the extended electrode (522), so that a current is inclined to bypass but not to penetrate the current barrier layer (532) to be spread from the electrode to the device (105).