POLISHING AGENT PRODUCTION METHOD, POLISHING METHOD, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a production method for a polishing agent with which the occurrence of polishing scratches on the surface to be polished can be suppressed and the CMP can be carried out at high polishing speed; and to provide a polishing method.SOLUTION: Provided is a polishing agent production method comprising: an ejection step in which a slurry containing cerium oxide particles and water is ejected at a predetermined ejection pressure; and a collision step in which the ejected slurry is collided with themselves or with rigid body whose modified Mohs hardness is 8 or more, such that the rate of change in an average primary particle diameter of the cerium oxide particles between before and after the collision is within 20% or less.