DEPOSITION METHOD OF Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL LAMINATED STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a deposition method of a GaO-based crystal film capable of depositing a GaO-based crystal film excellent in crystal quality or surface smoothness at a growth rate which is sufficient for mass production, and to provide a crystal laminated structure containing a GaO-based crystal film deposited by the deposition method.SOLUTION: In a deposition method of a GaO-based crystal film 12 in one embodiment, the GaO-based crystal film 12 is epitaxially grown at a growth temperature of 750°C or higher on a principal plane 11 in which a plane direction of a GaO-based substrate 10 is (001).